Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220

N° de stock RS:: 913-3960
Référence fabricant:: IRFB3077PBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

109,95 €

(TVA exclue)

133,05 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 - 50	2,199 €	109,95 €
100 - 200	2,133 €	106,65 €
250 +	2,045 €	102,25 €

*Prix donné à titre indicatif

N° de stock RS:: 913-3960
Référence fabricant:: IRFB3077PBF
Fabricant:: Infineon

Spécifications

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	370W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	160nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82 mm
	Length	10.66mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 370W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 160nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 9.02mm
	Width 4.82 mm
	Length 10.66mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF

This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.

Features & Benefits

• Achieves low RDS(on) of 3.3mΩ for efficient operation

• Designed for enhancement mode, supporting robust applications

• High maximum power dissipation of 370W optimises device longevity

• Improved avalanche and dynamic dV/dt ruggedness ensures safety

• Fully characterised capacitance, enhancing switching performance

• Suitable for high-speed power switching with excellent thermal stability

Applications

• Utilised in high-efficiency synchronous rectification systems

• Ideal for uninterruptible power supply configurations

• Effective in hard switched and high-frequency circuits

• Facilitates efficient power management in industrial automation systems

• Supports various power supply designs in electrical and mechanical

What operating temperature range can this component endure?

It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.

How does the low RDS(on) benefit the application?

The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.

What are the advantages of the TO-220AB package format?

This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.

What type of gate threshold voltage does it require?

The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.