Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263 IPB010N06NATMA1
- N° de stock RS:
- 906-4353
- Référence fabricant:
- IPB010N06NATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
11,59 €
(TVA exclue)
14,024 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 05 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,795 € | 11,59 € |
| 20 - 98 | 4,945 € | 9,89 € |
| 100 - 198 | 4,285 € | 8,57 € |
| 200 - 498 | 4,05 € | 8,10 € |
| 500 + | 3,63 € | 7,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 906-4353
- Référence fabricant:
- IPB010N06NATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 208nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Length | 10.31mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 208nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Length 10.31mm | ||
Automotive Standard No | ||
Statut RoHS : Exempté
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
Benefits
Potential Applications
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IPB017N06N3GATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263