Infineon OptiMOS 3 N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1

N° de stock RS:: 145-9552
Référence fabricant:: IPB011N04NGATMA1
Fabricant:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1

Sous-total (1 bobine de 1000 unités)*

1 632,00 €

(TVA exclue)

1 975,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 février 2027

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
1000 +	1,632 €	1 632,00 €

*Prix donné à titre indicatif

N° de stock RS:: 145-9552
Référence fabricant:: IPB011N04NGATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS 3
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	188nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Width	9.45mm
	Standards/Approvals	No
	Length	10.31mm
	Height	4.57mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS 3
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 188nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Width 9.45mm
	Standards/Approvals No
	Length 10.31mm
	Height 4.57mm
	Automotive Standard No

Statut RoHS non applicable

Pays d'origine :: CN

Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1

This MOSFET is optimised for high-performance applications in the electrical and mechanical sectors. It features a sturdy design and efficient operation, making it suitable for automation systems. With a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40V, it provides enhanced efficiency and reliability in circuit performance.

Features & Benefits

• High current handling improves system efficiency and performance

• Low Rds(on) reduces power loss during operation

• Surface mount design allows easy integration into PCBs

• Capable of dissipating up to 250W, serving a variety of applications

• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics

Applications

• Utilised in motor control and drive systems

• Suitable for power management in industrial automation

• Employed in DC-DC converters and inverters

• Used for load switching in power distribution systems

• Applicable in renewable energy systems, such as solar inverters

What is the maximum continuous drain current for this device?

The device can handle up to 180A of continuous drain current, making it appropriate for high-power applications.

Can it operate in high temperatures?

Yes, it has a maximum operating temperature of +175°C, allowing consistent performance under challenging conditions.

What are the gate threshold voltage specifications?

The maximum gate threshold voltage is 4V, while the minimum is 2V, providing flexibility in operational compatibility.

What type of mounting does this component support?

This product is designed for surface mounting, facilitating straightforward installation on various circuit boards.

How does this MOSFET contribute to power efficiency?

Its low Rds(on) Value of 1.1 mΩ significantly reduces power loss, enhancing the efficiency of electronic systems overall.