Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1
- N° de stock RS:
- 898-6918
- Référence fabricant:
- IPB011N04NGATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 4 unités)*
15,892 €
(TVA exclue)
19,228 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 3,973 € | 15,89 € |
| 20 - 76 | 3,498 € | 13,99 € |
| 80 - 196 | 3,055 € | 12,22 € |
| 200 - 396 | 2,868 € | 11,47 € |
| 400 + | 2,733 € | 10,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 898-6918
- Référence fabricant:
- IPB011N04NGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Statut RoHS non applicable
Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1
This MOSFET is optimised for high-performance applications in the electrical and mechanical sectors. It features a sturdy design and efficient operation, making it suitable for automation systems. With a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40V, it provides enhanced efficiency and reliability in circuit performance.
Features & Benefits
• High current handling improves system efficiency and performance
• Low Rds(on) reduces power loss during operation
• Surface mount design allows easy integration into PCBs
• Capable of dissipating up to 250W, serving a variety of applications
• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics
Applications
• Utilised in motor control and drive systems
• Suitable for power management in industrial automation
• Employed in DC-DC converters and inverters
• Used for load switching in power distribution systems
• Applicable in renewable energy systems, such as solar inverters
What is the maximum continuous drain current for this device?
The device can handle up to 180A of continuous drain current, making it appropriate for high-power applications.
Can it operate in high temperatures?
Yes, it has a maximum operating temperature of +175°C, allowing consistent performance under challenging conditions.
What are the gate threshold voltage specifications?
The maximum gate threshold voltage is 4V, while the minimum is 2V, providing flexibility in operational compatibility.
What type of mounting does this component support?
This product is designed for surface mounting, facilitating straightforward installation on various circuit boards.
How does this MOSFET contribute to power efficiency?
Its low Rds(on) Value of 1.1 mΩ significantly reduces power loss, enhancing the efficiency of electronic systems overall.
Liens connexes
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- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
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