Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 FP IPA093N06N3GXKSA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
892-2309
Référence fabricant:
IPA093N06N3GXKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.65mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

36 nC @ 10 V

Transistor Material

Si

Width

4.85mm

Height

16.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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