Infineon Single OptiMOS 3 1 Type N, Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-220FP IPA093N06N3GXKSA1

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N° de stock RS:
165-8110
Référence fabricant:
IPA093N06N3GXKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220FP

Series

OptiMOS 3

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

33W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Width

4.85 mm

Height

16.15mm

Length

10.65mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

Pays d'origine :
CN

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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