Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC
- N° de stock RS:
- 831-2869
- Référence fabricant:
- IRF7104TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
12,22 €
(TVA exclue)
14,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 400 unité(s) expédiée(s) à partir du 19 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,611 € | 12,22 € |
| 200 - 480 | 0,495 € | 9,90 € |
| 500 - 980 | 0,459 € | 9,18 € |
| 1000 - 1980 | 0,428 € | 8,56 € |
| 2000 + | 0,397 € | 7,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 831-2869
- Référence fabricant:
- IRF7104TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC IRF7104TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC