Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC
- N° de stock RS:
- 168-7931
- Référence fabricant:
- IRF7319TRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
1 560,00 €
(TVA exclue)
1 880,00 €
(TVA incluse)
Ajouter 4000 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 11 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,39 € | 1 560,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-7931
- Référence fabricant:
- IRF7319TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 98mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | -0.78V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 98mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf -0.78V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon Isolated HEXFET 2 Type P 6.5 A 8-Pin SOIC IRF7319TRPBF
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 7.3 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC IRF9952TRPBF
- Infineon Isolated HEXFET 2 Type P 7.3 A 8-Pin SOIC IRF7389TRPBF
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC IRF7309TRPBF