Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF
- N° de stock RS:
- 831-2853
- Numéro d'article Distrelec:
- 304-44-448
- Référence fabricant:
- IRF640NSTRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
12,32 €
(TVA exclue)
14,91 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 160 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 660 unité(s) expédiée(s) à partir du 04 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,232 € | 12,32 € |
| 50 - 90 | 1,172 € | 11,72 € |
| 100 - 240 | 1,123 € | 11,23 € |
| 250 - 490 | 1,049 € | 10,49 € |
| 500 + | 0,986 € | 9,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 831-2853
- Numéro d'article Distrelec:
- 304-44-448
- Référence fabricant:
- IRF640NSTRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- KR
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF
This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.
Features & Benefits
• N-channel configuration supports enhancement mode operation
• Maximum continuous drain current of 18A
• Peak drain-source voltage of 200V for diverse applications
• D2PAK package designed for surface mount convenience
• Low Rds(on) of 150mΩ reduces energy loss during operation
• High maximum operating temperature of +175°C for various environments
Applications
• Power management in automotive electronics
• Industrial power supplies for automation systems
• Motor control across different sectors
• Renewable energy systems for energy conversion
• High-frequency power inverter designs
What is the maximum drain-source voltage?
The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.
How is heat dissipation managed during operation?
This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.
What are the implications of the gate threshold voltage range?
With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.
Can this component be used in parallel configurations?
Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.
How should it be soldered for optimal performance?
The soldering temperature should not exceed 300°C for 10 seconds to ensure proper installation without damaging the MOSFET.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF640NPBF