Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF

N° de stock RS:: 130-1000
Numéro d'article Distrelec:: 304-36-991
Référence fabricant:: IRFS4020TRLPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

8,17 €

(TVA exclue)

9,885 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

800 unité(s) expédiée(s) à partir du 02 avril 2026

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Unité	Prix par unité	le paquet*
5 - 45	1,634 €	8,17 €
50 - 120	1,56 €	7,80 €
125 - 245	1,524 €	7,62 €
250 - 495	1,484 €	7,42 €
500 +	1,444 €	7,22 €

*Prix donné à titre indicatif

N° de stock RS:: 130-1000
Numéro d'article Distrelec:: 304-36-991
Référence fabricant:: IRFS4020TRLPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	18nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	9.65mm
	Width	4.83 mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 18nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 9.65mm
	Width 4.83 mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF

This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.

Features & Benefits

• Designed for high-efficiency Class-D audio amplification

• Low Rds(on) improves overall efficiency

• Operating junction temperature up to 175°C ensures robustness

• Repetitive avalanche capability safeguards against voltage spikes

Applications

• Utilised in Class-D audio amplifiers for improved sound quality

• Ideal for high current power supply

• Suitable for consumer and professional audio equipment

• Employed in high-performance automotive audio systems

What is the maximum continuous drain current?

The device can handle a maximum continuous drain current of 18A at 25°C.

Can this device operate at high temperatures?

Yes, it is designed to function effectively at temperatures as high as 175°C.

What configurations can it be used in?

It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.

How does low gate charge impact performance?

The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.

Is it compatible with surface mount technology?

Yes, this device is packaged in a D2PAK form factor, which is Ideal for surface mount applications.