Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF
- N° de stock RS:
- 124-8782
- Référence fabricant:
- IRF4905STRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 800 unités)*
921,60 €
(TVA exclue)
1 115,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 13 600 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 - 800 | 1,152 € | 921,60 € |
| 1600 + | 1,123 € | 898,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-8782
- Référence fabricant:
- IRF4905STRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Width 9.65mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- KR
Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF
This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.
Features & Benefits
• Improves system efficiency through low on-resistance values
• Functions effectively within a temperature range of -55°C to +150°C
• Supports fast switching speeds to enhance performance
• Features robust design for repetitive avalanche conditions
• Provided in a D2PAK TO-263 package for straightforward surface mounting
Applications
• Used in power management systems and converters
• Appropriate for motor control requiring high efficiency
• Integrated into switching power supplies for enhanced performance
• Applicable in automotive environments needing dependable control
• Employed in industrial automation requiring substantial power handling
What is the maximum temperature this device can operate at?
The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.
How does the low RDS(on) benefit circuit design?
Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.
Can this component handle pulsed currents?
Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.
What are the key parameters for selecting compatible driving voltages?
The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.
Is it suitable for high-frequency switching applications?
The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.
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