Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRLPBF

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9,40 €

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11,40 €

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le paquet*
10 +0,94 €9,40 €

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N° de stock RS:
831-2831
Référence fabricant:
IRF540NSTRLPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

71nC

Maximum Power Dissipation Pd

130W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

9.65 mm

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Automotive Standard

No

Distrelec Product Id

304-44-447

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF


This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.

Features & Benefits


• Low Rds(on) of 44mΩ improves circuit efficiency

• High power dissipation capability of 130W supports robust applications

• Fast switching speed minimises energy loss during operation

• Wide operating temperature range from -55°C to +175°C suits diverse environments

• Lead-free construction adheres to contemporary environmental standards

Applications


• Power management in automation systems

• High-efficiency power supplies for electronics

• Motor control in electrical engineering

• Renewable energy systems for effective energy conversion

What is the maximum gate-to-source voltage for this device?


The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.

How does this device handle thermal management?


With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.

What is the typical gate charge at 10V?


The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.

Can this device be mounted on standard PCBs?


Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.

What is the significance of the enhancement mode in this MOSFET?


The enhancement mode allows for greater control over the conduction state, providing improved performance in switching applications.

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