Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF
- N° de stock RS:
- 827-4114
- Référence fabricant:
- IRFS4615TRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
12,78 €
(TVA exclue)
15,465 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,556 € | 12,78 € |
| 50 - 120 | 2,296 € | 11,48 € |
| 125 - 245 | 2,146 € | 10,73 € |
| 250 - 495 | 2,02 € | 10,10 € |
| 500 + | 1,862 € | 9,31 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-4114
- Référence fabricant:
- IRFS4615TRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 150V Maximum Drain Source Voltage, 33A Maximum Continuous Drain Current - IRFS4615TRLPBF
This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for power switching in surface-mounted assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments while providing controlled gate-driven switching for medium- to high-current applications.
Features and Benefits:
• 150V drain-source withstand enables high-voltage switching capability
• 33A continuous drain current supports substantial load currents
• 42 mΩ RDS(on) minimises conduction losses under heavy load
• 26 nC typical gate charge allows predictable drive requirements
• 144W maximum power dissipation handles elevated power levels
• 20V gate-source limit protects against excessive gate stress
• 33A continuous drain current supports substantial load currents
• 42 mΩ RDS(on) minimises conduction losses under heavy load
• 26 nC typical gate charge allows predictable drive requirements
• 144W maximum power dissipation handles elevated power levels
• 20V gate-source limit protects against excessive gate stress
Applications
• Suitable for DC-DC converters in industrial power supplies
• Ideal for motor-drive stages requiring high current
• Used with battery-management systems needing high-voltage switching
• Can be used for synchronous rectification in power conversion
• Suitable for high-temperature power modules in harsh environments
• Ideal for motor-drive stages requiring high current
• Used with battery-management systems needing high-voltage switching
• Can be used for synchronous rectification in power conversion
• Suitable for high-temperature power modules in harsh environments
What thermal limits govern long-term operation?
The device is specified to function from -55 °C up to 175 °C, enabling use in high-temperature systems where elevated junction temperatures are expected.
What package and mounting style does it require?
It is supplied in a TO-263 package intended for surface-mount assembly on appropriate copper-area land patterns for heat dissipation.
How does the gate charge affect driver selection?
With a typical total gate charge of 26 nC, designers should select drivers capable of delivering the required charge within the target switching timeframe to limit transition losses.
What voltage constraints apply to the gate and drain?
The maximum permissible gate-to-source voltage is 20V while the drain-to-source voltage rating is 150V, defining safe operating boundaries for gate drive and load transients.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF540NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF540NSTRRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263 IRFS4115TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF