Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263

N° de stock RS:: 165-5894
Référence fabricant:: IRF540NSTRLPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263

Sous-total (1 bobine de 800 unités)*

447,20 €

(TVA exclue)

540,80 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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32 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
800 +	0,559 €	447,20 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5894
Référence fabricant:: IRF540NSTRLPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	130W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Width	9.65 mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 130W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Width 9.65 mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF

This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.

Features & Benefits

• Low Rds(on) of 44mΩ improves circuit efficiency

• High power dissipation capability of 130W supports robust applications

• Fast switching speed minimises energy loss during operation

• Wide operating temperature range from -55°C to +175°C suits diverse environments

• Lead-free construction adheres to contemporary environmental standards

Applications

• Power management in automation systems

• High-efficiency power supplies for electronics

• Motor control in electrical engineering

• Renewable energy systems for effective energy conversion

What is the maximum gate-to-source voltage for this device?

The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.

How does this device handle thermal management?

With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.

What is the typical gate charge at 10V?

The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.

Can this device be mounted on standard PCBs?

Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.

What is the significance of the enhancement mode in this MOSFET?

The enhancement mode allows for greater control over the conduction state, providing improved performance in switching applications.