Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin TO-252

N° de stock RS:: 830-3394
Référence fabricant:: IRLR8743TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin TO-252

Offre groupée disponible

Sous-total (1 paquet de 10 unités)*

9,17 €

(TVA exclue)

11,10 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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240 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le paquet*
10 - 40	0,917 €	9,17 €
50 - 90	0,871 €	8,71 €
100 - 240	0,835 €	8,35 €
250 - 490	0,798 €	7,98 €
500 +	0,744 €	7,44 €

*Prix donné à titre indicatif

N° de stock RS:: 830-3394
Référence fabricant:: IRLR8743TRPBF
Fabricant:: Infineon

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	160A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Power Dissipation Pd	135W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	2.39mm
	Standards/Approvals	No
	Width	6.22 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 160A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Power Dissipation Pd 135W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 2.39mm
	Standards/Approvals No
	Width 6.22 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLR8743TRPBF

This MOSFET is designed for high-performance applications in the automation and electronics sectors. Utilising HEXFET technology, it achieves significant efficiency and reliAbility in power management. Its Ability to handle high continuous drain currents makes it suitable for a variety of industrial settings.

Features & Benefits

• Handles a maximum continuous drain current of 160A for solid performance

• Offers a maximum drain-source voltage of 30V for dependable operation

• Low Rds(on) Value of 3.9mΩ minimises power losses

• Designed as an enhancement mode transistor to improve switching efficiency

• Surface mount capabilities allow for easy integration into circuit designs

• Rated for high operating temperatures up to +175°C for improved thermal management

Applications

• High frequency synchronous buck converters in computer power supplies

• Isolated DC-DC converters in telecom systems

• Industrial power management and automation systems

• Devices requiring low gate threshold voltages for efficient switching

• Various electronic devices that demand a Compact power solution

What is the impact of high temperatures on its performance?

Operating at elevated temperatures enhances its thermal performance, allowing it to manage high power levels effectively while ensuring stability in difficult conditions.

How does this technology improve efficiency in electronic devices?

The HEXFET technology significantly reduces power losses due to its low Rds(on), allowing devices to operate efficiently under high loads while generating less heat.

Can it be used in conjunction with other semiconductors?

Yes, it can be integrated with other semiconductor components in mixed-signal circuits, enhancing overall circuit functionality and performance.

What is the significance of its surface mount design?

The surface mount design supports Compact assembly on PCBs, enhances thermal management, and optimises space in electronic applications.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.