Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 8-Pin SOIC

N° de stock RS:: 145-9491
Référence fabricant:: IRF9952TRPBF
Fabricant:: Infineon

Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 4000 unités)*

1 176,00 €

(TVA exclue)

1 424,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

Expédition à partir du 05 mai 2026

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Unité	Prix par unité	la bobine*
4000 +	0,294 €	1 176,00 €

*Prix donné à titre indicatif

N° de stock RS:: 145-9491
Référence fabricant:: IRF9952TRPBF
Fabricant:: Infineon

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Documentation technique

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	6.1nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.82V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 6.1nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.82V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 2.3A/3.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF9952TRPBF

This versatile MOSFET delivers high performance in a Compact package, integrating both N-channel and P-channel configurations. It is designed for effective operation in various electronic applications, ensuring efficiency and dependability. With a maximum drain current of 3.5A and a maximum drain-source voltage of 30V, it is suitable for applications that require robust switching capabilities.

Features & Benefits

• Dual-channel configuration enhances design flexibility

• Surface mount design simplifies PCB assembly

• Low resistance (150mΩ and 400mΩ) reduces power loss

• High temperature operation (+150°C) ensures reliability in extreme conditions

• Improved gate charge characteristics enhance switching efficiency

• Isolated transistor configuration minimises cross-talk for cleaner signals

Applications

• Power management solutions

• Electric vehicle systems for improved efficiency

• Industrial automation and control

• Renewable energy systems for optimal performance

• Consumer electronics for enhanced device performance

How does the isolation of this device benefit my application?

The isolated configuration minimises interference among circuits, ensuring clean signals and preventing unwanted interactions between components.

What temperature range can this device handle during operation?

It can operate within a temperature range of -55°C to +150°C, making it suitable for extreme conditions.

Can I use this product in my surface mount PCB design?

Yes, its surface mount design allows for easy integration into PCB layouts, optimising space and enhancing thermal performance.

What factors should I consider when using this for switching applications?

Ensure the maximum gate-source voltage of ±20V is not exceeded and verify that the gate charge aligns with your switching frequency for optimal performance.

How do the specifications affect my power efficiency?

With low on-resistance and high continuous drain current, this MOSFET contributes to minimal power loss, enhancing overall energy efficiency in your circuit designs.