onsemi BS270 Type N-Channel Field Effect Transistor, 400 mA, 60 V Enhancement, 3-Pin TO-92 BS270
- N° de stock RS:
- 807-5184
- Référence fabricant:
- BS270
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 50 unités)*
16,55 €
(TVA exclue)
20,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 80,00 €
En voie de retrait du marché
- 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 200 unité(s) expédiée(s) à partir du 01 avril 2026
- 150 unité(s) finale(s) expédiée(s) à partir du 01 avril 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 450 | 0,331 € | 16,55 € |
| 500 - 950 | 0,286 € | 14,30 € |
| 1000 + | 0,247 € | 12,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 807-5184
- Référence fabricant:
- BS270
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Field Effect Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | BS270 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 625mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.7mm | |
| Length | 4.7mm | |
| Standards/Approvals | No | |
| Width | 3.93 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Field Effect Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series BS270 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 625mW | ||
Maximum Operating Temperature 150°C | ||
Height 4.7mm | ||
Length 4.7mm | ||
Standards/Approvals No | ||
Width 3.93 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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