onsemi BS270 Type N-Channel Field Effect Transistor, 400 mA, 60 V Enhancement, 3-Pin TO-92

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N° de stock RS:
166-3593
Référence fabricant:
BS270
Fabricant:
onsemi
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Marque

onsemi

Product Type

Field Effect Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

400mA

Maximum Drain Source Voltage Vds

60V

Series

BS270

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

625mW

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

4.7mm

Width

3.93 mm

Height

4.7mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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