onsemi PowerTrench Type N-Channel MOSFET, 18.5 A, 30 V Enhancement, 8-Pin SOIC FDS8813NZ
- N° de stock RS:
- 806-3668
- Référence fabricant:
- FDS8813NZ
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
9,95 €
(TVA exclue)
12,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 180 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,99 € | 9,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 806-3668
- Référence fabricant:
- FDS8813NZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Height | 1.575mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Height 1.575mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8813NZ
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6692A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6680A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8880
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8878
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8884
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6690A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6670A
