onsemi PowerTrench Type N-Channel MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC
- N° de stock RS:
- 166-2619
- Référence fabricant:
- FDS8884
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
560,00 €
(TVA exclue)
677,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 2 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,224 € | 560,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-2619
- Référence fabricant:
- FDS8884
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8884
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8813NZ
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6692A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6680A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8880
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8878
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6690A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6670A
