Vishay SiHFPS37N50A Type N-Channel Power MOSFET, 36 A, 500 V Enhancement, 3-Pin Super-247 SiHFPS37N50A-GE3
- N° de stock RS:
- 228-2856
- Référence fabricant:
- SiHFPS37N50A-GE3
- Fabricant:
- Vishay
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6,80 €
(TVA exclue)
8,23 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,80 € |
| 10 - 24 | 6,13 € |
| 25 - 49 | 5,78 € |
| 50 - 99 | 5,11 € |
| 100 + | 4,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2856
- Référence fabricant:
- SiHFPS37N50A-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | SiHFPS37N50A | |
| Package Type | Super-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series SiHFPS37N50A | ||
Package Type Super-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SiHFPS37N50A Series Power MOSFET, 500V Drain Source Voltage, 36A Continuous Drain Current - SiHFPS37N50A-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion roles in industrial electronics. It operates across a wide temperature span and is offered in a through-hole Super-247 package for robust mounting and reliable thermal path. The component conforms to RoHS requirements and is intended for applications demanding elevated voltage handling and continuous drain capability.
Features and Benefits:
• 500V drain rating enables high-voltage switching applications
• 36A continuous drain current supports heavy load handling
• 130mΩ Rds(on) reduces conduction losses under load
• 446W power dissipation permits elevated power throughput
• 180nC typical gate charge optimises switching energy trade-offs
• 30V gate tolerance allows use with wide gate-drive voltages
• 36A continuous drain current supports heavy load handling
• 130mΩ Rds(on) reduces conduction losses under load
• 446W power dissipation permits elevated power throughput
• 180nC typical gate charge optimises switching energy trade-offs
• 30V gate tolerance allows use with wide gate-drive voltages
Applications
• Suitable for industrial power supplies and converters
• Ideal for high-voltage motor drive stages
• Used in switching stages of lighting and ballast systems
• Can be used for inverter front-ends in power electronics
• Appropriate for laboratory and prototyping through-hole assemblies
• Ideal for high-voltage motor drive stages
• Used in switching stages of lighting and ballast systems
• Can be used for inverter front-ends in power electronics
• Appropriate for laboratory and prototyping through-hole assemblies
What ambient temperatures can this device tolerate during operation?
It is specified for operation from -55°C up to 150°C, supporting use in extended temperature environments.
How does the package choice affect heat handling and assembly?
The Super-247 through-hole package provides a substantial thermal path to soldered mounting points, aiding heat dissipation in high-power assemblies.
What gate-drive constraints should be considered for reliable use?
The device permits gate-source voltages up to 30V
designs should limit Vgs within this range to prevent gate damage.
Is this device suitable for avalanche or transient energy absorption?
The maximum gate rating of 30V and its high-voltage drain capability indicate it can be used in circuits where transient robustness is required, but transient energy handling should be verified against system-level considerations.
Liens connexes
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