Vishay SiHFPS37N50A Type N-Channel Power MOSFET, 36 A, 500 V Enhancement, 3-Pin Super-247 SiHFPS37N50A-GE3
- N° de stock RS:
- 228-2856
- Référence fabricant:
- SiHFPS37N50A-GE3
- Fabricant:
- Vishay
Offre groupée disponible
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6,80 €
(TVA exclue)
8,23 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,80 € |
| 10 - 24 | 6,13 € |
| 25 - 49 | 5,78 € |
| 50 - 99 | 5,11 € |
| 100 + | 4,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2856
- Référence fabricant:
- SiHFPS37N50A-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | Super-247 | |
| Series | SiHFPS37N50A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 446W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type Super-247 | ||
Series SiHFPS37N50A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 446W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SiHFPS37N50A Series Power MOSFET, 500V Drain Source Voltage, 36A Continuous Drain Current - SiHFPS37N50A-GE3
This power MOSFET is a high-voltage, N-channel enhancement device designed for switching and power-management roles in industrial and electronic systems. It is a through-hole component in a Super-247 package intended for applications where robust thermal handling and high drain-source voltage capability are needed. The device operates across a wide temperature range and is specified for continuous drain current and substantial power dissipation, making it suitable for demanding power-switching tasks.
Features and Benefits:
• 500V drain-source rating enabling high-voltage switching capability • 36 A continuous drain current supporting heavy load handling • 130 mΩ Rds(on) reducing conduction losses under load • 446W power dissipation improving thermal endurance in circuits • 180 nC typical gate charge facilitating predictable drive requirements • 30V maximum gate-source voltage providing common gate-drive margin
Applications
• Suitable for industrial inverter and motor-drive stages • Ideal for high-voltage power supplies and converters • Can be used for induction heating and welding power modules • Used with power rectification and switching arrays in automation • Suitable for gate-drive evaluation in power-electronics design
What are the thermal limits I should design for?
The device is rated to operate up to 150 °C maximum and down to -55 °C minimum, so thermal management should ensure junction temperature stays within that range under worst-case dissipation.
How should I approach gate-drive design for this component?
Expect a typical gate charge of 180 nC at the designated Vgs
design driver current and switching slope to control switching losses and EMI accordingly.
What package and mounting considerations apply?
It is supplied in a Super-247 through-hole package with three pins
ensure adequate PCB copper and heatsinking for the stated 446W dissipation to manage junction-to-ambient thermal resistance.
Are there specific voltage limitations for the gate?
The gate must not exceed a maximum gate-source voltage of 30V to prevent damage to the gate oxide.
Liens connexes
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