Infineon HEXFET Type N-Channel MOSFET, 60 V Enhancement, 7-Pin TO-263-7 AUIRLS3036-7P

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Indisponible
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N° de stock RS:
784-9243
Référence fabricant:
AUIRLS3036-7P
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-263-7

Pin Count

7

Channel Mode

Enhancement

Maximum Power Dissipation Pd

380W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Pays d'origine :
MX

Automotive N-Channel Power MOSFET, Infineon


Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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