Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263

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N° de stock RS:
222-4605
Référence fabricant:
AUIRF2804STRL7P
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

320A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

170nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

330W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

4.83mm

Width

9.65 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

AEC-Q101

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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