Infineon HEXFET Type N-Channel MOSFET, 557 A, 40 V Enhancement, 7-Pin TO-263 IRL40SC228
- N° de stock RS:
- 222-4755
- Référence fabricant:
- IRL40SC228
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
29,84 €
(TVA exclue)
36,105 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 5,968 € | 29,84 € |
| 25 - 45 | 5,016 € | 25,08 € |
| 50 - 120 | 4,654 € | 23,27 € |
| 125 - 245 | 4,358 € | 21,79 € |
| 250 + | 4,058 € | 20,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4755
- Référence fabricant:
- IRL40SC228
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 557A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 416W | |
| Typical Gate Charge Qg @ Vgs | 307nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 557A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 416W | ||
Typical Gate Charge Qg @ Vgs 307nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 557A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRL40SC228
This high power MOSFET is designed for various applications requiring robust performance and efficiency. It features a compact D2PAK-7 surface mount package, ensuring convenient installation in space-constrained environments. With a continuous drain current capability of 557A and a maximum drain-source voltage of 40V, its dimensions measure 10.54mm in length, 9.65mm in width, and 4.83mm in height.
Features & Benefits
• Optimised for logic level drive for enhanced compatibility
• Low RDS(on) of 0.50mΩ for reduced power loss
• High current capacity up to 557A for demanding applications
• Versatile applications in motor drives and power supplies
Applications
• Suitable for brushed and BLDC motor drive circuits
• Ideal for battery-powered electronic systems
• Utilised in half-bridge and full-bridge circuit topologies
• Effective as a synchronous rectifier in power supply
• Used in DC-DC and AC-DC converters
What are the key benefits of using this device in high-current applications?
The device's low on-resistance significantly improves efficiency, allowing for higher current flow without substantial heat generation. This supports reliability and performance in demanding situations where current capacity is critical.
How does this MOSFET perform under high temperature conditions?
It operates effectively across a wide temperature range from -55°C to +175°C, ensuring stability and functionality even under extreme operating conditions.
What features enhance the robustness of this MOSFET during operation?
Enhanced gate and avalanche ruggedness protect it from voltage spikes, while its low dynamic dV/dt capabilities contribute to consistent performance in rapidly changing conditions.
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