onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6561AN
- N° de stock RS:
- 761-9838
- Référence fabricant:
- FDC6561AN
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
3,98 €
(TVA exclue)
4,82 €
(TVA incluse)
Ajouter 220 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 27 560 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,398 € | 3,98 € |
| 100 - 240 | 0,343 € | 3,43 € |
| 250 - 490 | 0,297 € | 2,97 € |
| 500 - 990 | 0,261 € | 2,61 € |
| 1000 + | 0,237 € | 2,37 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-9838
- Référence fabricant:
- FDC6561AN
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 152mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 960mW | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 152mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 960mW | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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