onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6561AN

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Sous-total (1 paquet de 10 unités)*

3,98 €

(TVA exclue)

4,82 €

(TVA incluse)

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  • Plus 27 680 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité
Prix par unité
le paquet*
10 - 900,398 €3,98 €
100 - 2400,343 €3,43 €
250 - 4900,297 €2,97 €
500 - 9900,261 €2,61 €
1000 +0,237 €2,37 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
761-9838
Référence fabricant:
FDC6561AN
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

152mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960mW

Forward Voltage Vf

0.78V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

2.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Width

1.7 mm

Standards/Approvals

No

Length

3mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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