onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 1.9 A, 20 V Enhancement, 6-Pin SOT-23 FDC6306P
- N° de stock RS:
- 761-9834
- Référence fabricant:
- FDC6306P
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
5,24 €
(TVA exclue)
6,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 050 unité(s) expédiée(s) à partir du 17 février 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,524 € | 5,24 € |
| 100 - 240 | 0,452 € | 4,52 € |
| 250 - 490 | 0,392 € | 3,92 € |
| 500 - 990 | 0,344 € | 3,44 € |
| 1000 + | 0,313 € | 3,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-9834
- Référence fabricant:
- FDC6306P
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 960mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 960mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 1.7 mm | ||
Height 1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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