Références fabricant

Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD031N03LGBTMA1

N° de stock RS:: 754-5446
Référence fabricant:: IPD031N03LGBTMA1
Fabricant:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD031N03LGBTMA1

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

5,49 €

(TVA exclue)

6,645 €

(TVA incluse)

Informations sur le stock actuellement non accessibles

Unité	Prix par unité	le paquet*
5 - 45	1,098 €	5,49 €
50 - 120	1,01 €	5,05 €
125 - 245	0,95 €	4,75 €
250 - 495	0,872 €	4,36 €
500 +	0,804 €	4,02 €

*Prix donné à titre indicatif

N° de stock RS:: 754-5446
Référence fabricant:: IPD031N03LGBTMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	30 V
	Series	OptiMOS 3
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	4.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	25 nC @ 4.5 V
	Length	6.73mm
	Width	6.22mm
	Number of Elements per Chip	1
	Height	2.41mm
	Minimum Operating Temperature	-55 °C

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 30 V
	Series OptiMOS 3
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 4.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 25 nC @ 4.5 V
	Length 6.73mm
	Width 6.22mm
	Number of Elements per Chip 1
	Height 2.41mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD031N03LGBTMA1

Infineon OptiMOS™3 Power MOSFETs, up to 40V

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