Quad N/P-Channel-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC Diodes Inc ZXMHC3F381N8TC

N° de stock RS:: 751-5344
Référence fabricant:: ZXMHC3F381N8TC
Fabricant:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC Diodes Inc ZXMHC3F381N8TC

Prix L'unité (en paquet de 5)

0,46 €

(TVA exclue)

0,56 €

(TVA incluse)

75 En stock pour livraison sous 4 jour(s)

Unité	Prix par unité	le paquet*
5 +	0,46 €	2,30 €

*prix conseillé

N° de stock RS:: 751-5344
Référence fabricant:: ZXMHC3F381N8TC
Fabricant:: DiodesZetex

30V SO8 Complementary Enhancement Mode MOSFET H-Bridge
Datasheet
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.98 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	60 mΩ, 80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.35 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	9 nC @ 10 V
Transistor Material	Si
Width	4mm
Number of Elements per Chip	4
Height	1.5mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC Diodes Inc ZXMHC3F381N8TC

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.