Infineon HEXFET Type N-Channel Power MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220AB

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N° de stock RS:
688-7308
Référence fabricant:
IRLZ44ZPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220AB

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

175°C

Standards/Approvals

Lead-Free

Length

10.67mm

Height

8.77mm

Width

9.65 mm

Automotive Standard

AEC-Q101

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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