Infineon HEXFET N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB AUIRL3705N

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N° de stock RS:
748-1894
Référence fabricant:
AUIRL3705N
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Length

10.66mm

Transistor Material

Si

Width

4.82mm

Typical Gate Charge @ Vgs

98 nC @ 5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

16.51mm

Automotive N-Channel Power MOSFET, Infineon


Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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