Infineon HEXFET Type N-Channel MOSFET, 53 A, 55 V Enhancement, 3-Pin TO-220AB IRFZ46NPBF
- N° de stock RS:
- 541-0711
- Référence fabricant:
- IRFZ46NPBF
- Fabricant:
- Infineon
Sous-total (1 unité)*
0,33 €
(TVA exclue)
0,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 738 unité(s) expédiée(s) à partir du 27 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 0,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-0711
- Référence fabricant:
- IRFZ46NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Width | 4.82 mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Width 4.82 mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 53A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFZ46NPBF
This MOSFET is essential for high-efficiency applications in automation and electronics. It effectively manages significant currents and voltages, making it applicable in various industrial settings. Its advanced design supports reliable operation in extreme temperatures, addressing diverse electronic needs while simplifying circuit designs.
Features & Benefits
• Continuous drain current capability of 53A for demanding loads
• Maximum power dissipation of 107W for effective thermal management
• Low on-resistance of 17mΩ, improving efficiency
• Enhancement mode design allows for versatile application
• Defined gate threshold voltage specifications ensure precise control
Applications
• Power conversion in industrial automation systems
• Motor control and driving circuits
• Power management systems for energy-efficient designs
• Implementation in switch mode power supplies for consistency
• Electronic switching requiring swift response
Can it operate at high temperatures?
Yes, it operates efficiently at temperatures up to +175°C.
What current can it handle at elevated temperatures?
At 100°C, it can safely manage a continuous drain current of 37A.
How do I ensure optimal thermal performance during installation?
Using a TO-220AB package with adequate heat sinking can effectively minimise thermal resistance and ensure performance.
What are the gate threshold voltage specifications?
The gate threshold voltage is specified to range between 2V and 4V for accurate operational control.
Is it suitable for use in power supplies?
Yes, it is effective in switch mode power supplies due to its rapid switching capabilities and low on-resistance.
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