Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF
- N° de stock RS:
- 688-7140
- Référence fabricant:
- IRFU3711ZPBF
- Fabricant:
- Infineon
Visuel non contractuel
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
2,32 €
(TVA exclue)
2,805 €
(TVA incluse)
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 0,464 € | 2,32 € |
| 25 - 45 | 0,452 € | 2,26 € |
| 50 - 95 | 0,44 € | 2,20 € |
| 100 - 245 | 0,428 € | 2,14 € |
| 250 + | 0,412 € | 2,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-7140
- Référence fabricant:
- IRFU3711ZPBF
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 93 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.45V | |
| Minimum Gate Threshold Voltage | 1.55V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Width | 2.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.1mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 93 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.45V | ||
Minimum Gate Threshold Voltage 1.55V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 18 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Width 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 6.1mm | ||
- Pays d'origine :
- MX
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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