N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Fairchild IRF530A

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
671-5367
Référence fabricant:
IRF530A
Fabricant:
Fairchild Semiconductor
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Transistor Material

Si

Height

9.4mm

Minimum Operating Temperature

-55 °C

Advanced Power MOSFET, Fairchild Semiconductor


Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes