N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Fairchild IRF530A
- N° de stock RS:
- 671-5367
- Référence fabricant:
- IRF530A
- Fabricant:
- Fairchild Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
5,24 €
(TVA exclue)
6,34 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,048 € | 5,24 € |
| 25 - 95 | 0,83 € | 4,15 € |
| 100 - 245 | 0,648 € | 3,24 € |
| 250 - 495 | 0,586 € | 2,93 € |
| 500 + | 0,478 € | 2,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-5367
- Référence fabricant:
- IRF530A
- Fabricant:
- Fairchild Semiconductor
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 55 W | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.7mm | |
| Length | 10.1mm | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.7mm | ||
Length 10.1mm | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
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