Fairchild PowerTrench N-Channel MOSFET, 17 A, 60 V, 3-Pin TO-220AB FDP038AN06A0
- N° de stock RS:
- 124-1747
- Référence fabricant:
- FDP038AN06A0
- Fabricant:
- Fairchild Semiconductor
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
124,30 €
(TVA exclue)
150,40 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 2,486 € | 124,30 € |
| 250 - 450 | 2,26 € | 113,00 € |
| 500 + | 2,072 € | 103,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1747
- Référence fabricant:
- FDP038AN06A0
- Fabricant:
- Fairchild Semiconductor
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.65mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 96 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.65mm | ||
- Pays d'origine :
- CN
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