Fairchild PowerTrench N-Channel MOSFET, 17 A, 60 V, 3-Pin TO-220AB FDP038AN06A0
- N° de stock RS:
- 124-1747
- Référence fabricant:
- FDP038AN06A0
- Fabricant:
- Fairchild Semiconductor
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 124-1747
- Référence fabricant:
- FDP038AN06A0
- Fabricant:
- Fairchild Semiconductor
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | PowerTrench | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.65mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 96 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.65mm | ||
- Pays d'origine :
- CN
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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