Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
- N° de stock RS:
- 862-9359P
- Référence fabricant:
- ISL9V3040P3
- Fabricant:
- Fairchild Semiconductor
Offre groupée disponible
Sous-total 10 unités (conditionné en tube)*
24,04 €
(TVA exclue)
29,09 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 150 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 10 - 95 | 2,404 € |
| 100 - 495 | 1,974 € |
| 500 - 995 | 1,662 € |
| 1000 + | 1,464 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 862-9359P
- Référence fabricant:
- ISL9V3040P3
- Fabricant:
- Fairchild Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 21 A | |
| Maximum Collector Emitter Voltage | 450 V | |
| Maximum Gate Emitter Voltage | ±14V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 4.7 x 16.3mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Fairchild Semiconductor | ||
Maximum Continuous Collector Current 21 A | ||
Maximum Collector Emitter Voltage 450 V | ||
Maximum Gate Emitter Voltage ±14V | ||
Maximum Power Dissipation 150 W | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 4.7 x 16.3mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- Fairchild ISL9V3040P3 IGBT 3-Pin TO-220AB, Through Hole
- Fairchild ISL9V3040S3ST IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild ISL9V5036P3_F085 IGBT 3-Pin TO-220AB, Through Hole
- Fairchild FGB3245G2_F085 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild FGD3245G2_F085 IGBT 3-Pin DPAK, Surface Mount
- Fairchild FGP3440G2_F085 IGBT 3-Pin TO-220, Through Hole
- N-Channel MOSFET 100 V, 3-Pin TO-220AB Fairchild IRF530A
- Fairchild UniFET N-Channel MOSFET 200 V, 3-Pin TO-220AB FDP52N20