Fairchild Semiconductor ISL9V3040P3, Type N-Channel IGBT, 21 A 430 V, 3-Pin TO-220AB, Through Hole
- N° de stock RS:
- 862-9359
- Référence fabricant:
- ISL9V3040P3
- Fabricant:
- Fairchild Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
14,92 €
(TVA exclue)
18,055 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En voie de retrait du marché
- 20 restante(s), prêt à être expédié
- Plus 80 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 1 075 unité(s) finale(s) expédiée(s) à partir du 05 mars 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 2,984 € | 14,92 € |
| 10 - 95 | 2,404 € | 12,02 € |
| 100 - 495 | 1,974 € | 9,87 € |
| 500 - 995 | 1,662 € | 8,31 € |
| 1000 + | 1,464 € | 7,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 862-9359
- Référence fabricant:
- ISL9V3040P3
- Fabricant:
- Fairchild Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fairchild Semiconductor | |
| Maximum Continuous Collector Current Ic | 21A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK | |
| Energy Rating | 300mJ | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Fairchild Semiconductor | ||
Maximum Continuous Collector Current Ic 21A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK | ||
Energy Rating 300mJ | ||
Automotive Standard AEC-Q101 | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
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