onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23 NDS352AP

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Sous-total (1 paquet de 10 unités)*

2,82 €

(TVA exclue)

3,41 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
10 - 900,282 €2,82 €
100 - 2400,244 €2,44 €
250 - 4900,211 €2,11 €
500 - 9900,184 €1,84 €
1000 +0,168 €1,68 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-1084
Référence fabricant:
NDS352AP
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

900mA

Maximum Drain Source Voltage Vds

30V

Series

NDS352AP

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500mW

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

2nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.92mm

Height

0.94mm

Width

1.4 mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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