onsemi Type P-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 186-7202
- Référence fabricant:
- NTR1P02LT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
171,00 €
(TVA exclue)
207,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,057 € | 171,00 € |
| 6000 - 9000 | 0,055 € | 165,00 € |
| 12000 - 15000 | 0,054 € | 162,00 € |
| 18000 - 21000 | 0,052 € | 156,00 € |
| 24000 + | 0,051 € | 153,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-7202
- Référence fabricant:
- NTR1P02LT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
These miniature surface mount MOSFETs low RDS(on) ensure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications of these P-Channel Small Signal MOSFETs are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
End Products
Computers
Printers
PCMCIA cards
Cellular and Cordless Telephones
Applications
DC-DC Converters
Power Management in Portable and Battery Powered Products
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