onsemi PowerTrench Type N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-23 FDV305N
- N° de stock RS:
- 671-0797
- Référence fabricant:
- FDV305N
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
2,42 €
(TVA exclue)
2,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- Plus 2 650 unité(s) expédiée(s) à partir du 31 décembre 2025
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,242 € | 2,42 € |
| 100 - 240 | 0,209 € | 2,09 € |
| 250 - 490 | 0,181 € | 1,81 € |
| 500 - 990 | 0,16 € | 1,60 € |
| 1000 + | 0,145 € | 1,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0797
- Référence fabricant:
- FDV305N
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.75V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.75V | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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