onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23

Offre groupée disponible

Sous-total (1 bobine de 3000 unités)*

393,00 €

(TVA exclue)

477,00 €

(TVA incluse)

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  • Expédition à partir du 12 mai 2026
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Unité
Prix par unité
la bobine*
3000 - 30000,131 €393,00 €
6000 - 120000,128 €384,00 €
15000 +0,124 €372,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-2408
Référence fabricant:
BSS84
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

130mA

Maximum Drain Source Voltage Vds

50V

Series

BSS84

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250mW

Typical Gate Charge Qg @ Vgs

0.9nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-65°C

Maximum Operating Temperature

150°C

Width

1.3 mm

Standards/Approvals

No

Length

3mm

Height

1mm

Automotive Standard

AEC-Q200, AEC-Q100, AEC-Q101

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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