onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 FQD13N10LTM

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Sous-total (1 paquet de 5 unités)*

3,83 €

(TVA exclue)

4,635 €

(TVA incluse)

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  • 2 390 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité
Prix par unité
le paquet*
5 +0,766 €3,83 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0952
Référence fabricant:
FQD13N10LTM
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

100V

Series

QFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

2.3mm

Length

6.6mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

Pays d'origine :
MY

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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