onsemi QFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 FQD8P10TM
- N° de stock RS:
- 671-1043
- Référence fabricant:
- FQD8P10TM
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
4,14 €
(TVA exclue)
5,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 60 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 7 200 unité(s) expédiée(s) à partir du 26 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 0,828 € | 4,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-1043
- Référence fabricant:
- FQD8P10TM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -4V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -4V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 FQD3P50TM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 FQD11P06TM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 FQD17P06TM
- onsemi QFET Type P-Channel P-Channel QFET MOSFET 500 V Enhancement, 3-Pin TO-220AB FQP3P50