onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 2500 unités)*

637,50 €

(TVA exclue)

772,50 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 03 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
la bobine*
2500 +0,255 €637,50 €

*Prix donné à titre indicatif

N° de stock RS:
166-2636
Référence fabricant:
FQD13N10LTM
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

QFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Height

2.3mm

Length

6.6mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

Pays d'origine :
CN

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes