Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin I2PAK
- N° de stock RS:
- 650-3707
- Référence fabricant:
- IRF5210LPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
12,72 €
(TVA exclue)
15,39 €
(TVA incluse)
Ajouter 35 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 5 unité(s) expédiée(s) à partir du 25 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,544 € | 12,72 € |
| 25 - 45 | 2,29 € | 11,45 € |
| 50 - 120 | 2,138 € | 10,69 € |
| 125 - 245 | 1,986 € | 9,93 € |
| 250 + | 1,856 € | 9,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 650-3707
- Référence fabricant:
- IRF5210LPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 10.54mm | |
| Length | 10.54mm | |
| Standards/Approvals | Lead-Free | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Height 10.54mm | ||
Length 10.54mm | ||
Standards/Approvals Lead-Free | ||
Width 4.69 mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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