Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF
- N° de stock RS:
- 542-9490
- Référence fabricant:
- IRFBC20PBF
- Fabricant:
- Vishay
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0,67 €
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0,81 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 0,67 € |
| 10 - 49 | 0,57 € |
| 50 - 99 | 0,54 € |
| 100 - 249 | 0,51 € |
| 250 + | 0,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 542-9490
- Référence fabricant:
- IRFBC20PBF
- Fabricant:
- Vishay
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | IRFBC20 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series IRFBC20 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRFBC20 Series Power MOSFET, 600V Maximum Drain Source Voltage, 50W Maximum Power Dissipation - IRFBC20PBF
This power MOSFET is a high-voltage N-channel switching transistor designed for use in power conversion and control circuits. It operates as an enhancement-mode device suitable for switching and amplification tasks across a wide industrial temperature span, and is supplied in a through-hole TO-220AB package for straightforward mounting and heat-sinking integration.
Features and Benefits:
• 600V drain-to-source withstand allows high-voltage switching
• 2.2A continuous drain current supports moderate load currents
• 4.4Ω low Rds(on) reduces conduction losses where currents are limited
• 50W maximum power dissipation enables sustained thermal loading
• 18nC typical gate charge allows predictable switching behaviour
• 20V gate rating permits common gate-drive voltages
• 2.2A continuous drain current supports moderate load currents
• 4.4Ω low Rds(on) reduces conduction losses where currents are limited
• 50W maximum power dissipation enables sustained thermal loading
• 18nC typical gate charge allows predictable switching behaviour
• 20V gate rating permits common gate-drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power controllers in industrial equipment
• Used with discrete driver stages in motor-control interfaces
• Can be used for snubber and clamp functions in power systems
• Suitable for laboratory prototyping using through-hole mounting
• Ideal for switch-mode power controllers in industrial equipment
• Used with discrete driver stages in motor-control interfaces
• Can be used for snubber and clamp functions in power systems
• Suitable for laboratory prototyping using through-hole mounting
What ambient temperatures can it withstand in operation?
It can operate across an industrial range from -55°C up to 150°C allowing use in harsh thermal environments.
How should it be mounted for effective heat dissipation?
The TO-220AB through-hole format is compatible with standard heatsinks and PCB-mounting with screw attachment for improved thermal transfer.
What gate-drive limits must be observed?
The maximum gate-to-source voltage is 20V, so gate-drive circuitry should be constrained to that level to avoid damaging the gate oxide.
Is it suitable for automotive-grade applications?
It is not specified to meet automotive standards and should therefore be avoided where automotive approvals are mandatory.
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