Vishay P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD9120PBF

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
541-0553
Référence fabricant:
IRFD9120PBF
Fabricant:
Vishay
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Marque

Vishay

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5mm

Height

3.37mm

Minimum Operating Temperature

-55 °C

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centres.

Dynamic dV/dt rating
Repetitive avalanche rated


MOSFET Transistors, Vishay Semiconductor

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