Vishay Single 1 Type P-Channel Power MOSFET, -0.4 A, 200 V, 4-Pin HVMDIP
- N° de stock RS:
- 180-8628
- Référence fabricant:
- IRFD9210PBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
15,90 €
(TVA exclue)
19,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 160 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 20 | 0,795 € | 15,90 € |
| 40 - 80 | 0,779 € | 15,58 € |
| 100 - 180 | 0,675 € | 13,50 € |
| 200 - 480 | 0,636 € | 12,72 € |
| 500 + | 0,524 € | 10,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8628
- Référence fabricant:
- IRFD9210PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -0.4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HVMDIP | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 8.38mm | |
| Length | 10.79mm | |
| Width | 5 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -0.4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HVMDIP | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 8.38mm | ||
Length 10.79mm | ||
Width 5 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Vishay IRFD9210 is a P-channel power MOSFET having drain to source(Vds) voltage of -200V.The gate to source voltage(VGS) is 20V. It is having HVMDIP package. It offers drain to source resistance (RDS.) 3ohms at 10VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
For automatic insertion
Liens connexes
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