Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
- N° de stock RS:
- 462-3247
- Référence fabricant:
- SPD08P06PGBTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
7,46 €
(TVA exclue)
9,03 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En voie de retrait du marché
- Plus 180 unité(s) expédiée(s) à partir du 31 août 2026
- 4 100 unité(s) finale(s) expédiée(s) à partir du 07 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,746 € | 7,46 € |
| 100 - 240 | 0,709 € | 7,09 € |
| 250 - 490 | 0,68 € | 6,80 € |
| 500 - 990 | 0,649 € | 6,49 € |
| 1000 + | 0,605 € | 6,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 462-3247
- Référence fabricant:
- SPD08P06PGBTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.55V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.55V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1
This MOSFET is designed for applications requiring efficient switching and control. It can handle continuous drain currents of 8.8A and a drain-source voltage of 60V, suitable for various electronic circuits. The device operates effectively within a broad temperature range, enhancing performance in challenging environments.
Features & Benefits
• Enhanced mode operation ensures efficient switching performance
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications
Applications
• Applicable in automotive electronic controls for high reliability
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products
What are the implications of using a P-channel configuration?
P-channel configurations facilitate easy integration in high-side switch applications, providing convenient control within circuits.
How does the thermal performance affect longevity?
The capability to operate at up to +175°C enhances reliability and contributes to a longer lifespan in harsh environments.
What is the significance of the AEC-Q101 qualification?
This qualification confirms its suitability for automotive applications, meeting stringent reliability and safety standards.
Can this be used in conjunction with other MOSFETs?
Yes, it can be integrated with other components to create complementary circuits for efficient multi-switching applications.
What factors influence the power dissipation in this device?
Key factors include ambient temperature, drain current, and duty cycle during operation, all affecting overall thermal performance.
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