onsemi Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 368-3197
- Référence fabricant:
- RFP12N10L
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
29,50 €
(TVA exclue)
35,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 350 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 0,59 € | 29,50 € |
| 250 - 450 | 0,574 € | 28,70 € |
| 500 - 950 | 0,558 € | 27,90 € |
| 1000 - 2450 | 0,545 € | 27,25 € |
| 2500 + | 0,531 € | 26,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 368-3197
- Référence fabricant:
- RFP12N10L
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 RFP12N10L
- onsemi MTP3055VL Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 FDP12N60NZ
- onsemi MTP3055VL Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 MTP3055VL
- onsemi Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 NTP6410ANG
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220