onsemi FDPF Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 181-1862
- Référence fabricant:
- FDPF4D5N10C
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 181-1862
- Référence fabricant:
- FDPF4D5N10C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | FDPF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 37.5W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 16.07mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series FDPF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 37.5W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 16.07mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
Liens connexes
- onsemi FDPF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 FDPF4D5N10C
- onsemi FDPF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi FDPF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C
- onsemi FDP Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi FDP Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C
- onsemi NTN Type N-Channel MOSFET 20 V Enhancement, 3-Pin xDFN3
- onsemi NTN Type N-Channel MOSFET 20 V Enhancement, 3-Pin xDFN3 NTNS0K8N021ZTCG
- onsemi BSS138K Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23